Fossum, Jerry G., 1943-

Fundamentals of ultra-thin-body MOSFETs and FinFETs / Jerry G. Fossum, University of Florida, Gainesville, Vishal P. Trivedi, Freescale Semiconductor, Arizona. - 1st ed. - 2013 - xvi, 210 pages : illustrations ; 26 cm

Includes bibliographical references (pages 200-207) and index.

Machine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index.

"Understand the theory, design, and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. * describes FD/SOI MOSFETs and 3-D FinFETs in detail * covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM"--

9781107030411 (hardback)

2013013370


Metal oxide semiconductor field-effect transistors.
Integrated circuits--Very large scale integration.
TECHNOLOGY & ENGINEERING / Electronics / Optoelectronics

TK7871.99.M44 / F67 2013

621.3815284