Fundamentals of ultra-thin-body MOSFETs and FinFETs / Jerry G. Fossum, University of Florida, Gainesville, Vishal P. Trivedi, Freescale Semiconductor, Arizona.
Material type: TextPublisher: Cambridge ; New York : Cambridge University Press, 2013Edition: 1st edDescription: xvi, 210 pages : illustrations ; 26 cmContent type:- text
- unmediated
- volume
- 9781107030411 (hardback)
- 621.3815284 23
- TK7871.99.M44 F67 2013
- TEC008080
Item type | Current library | Call number | Status | Date due | Barcode | |
---|---|---|---|---|---|---|
Books | Centeral Library Second Floor - Engineering & Architecture | 621.3815284 F.J.F 2013 (Browse shelf(Opens below)) | Available | 21774 | ||
Books | Centeral Library Second Floor - Engineering & Architecture | 621.3815284 F.J.F 2013 (Browse shelf(Opens below)) | Available | 21775 |
Includes bibliographical references (pages 200-207) and index.
Machine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index.
"Understand the theory, design, and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. * describes FD/SOI MOSFETs and 3-D FinFETs in detail * covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM"--
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